PART |
Description |
Maker |
2SJ625 2SJ625-T1B 2SJ625-T2B |
Pch enhancement type MOS FET MOS FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
UPA1917TE UPA1917 UPA1917TE-T2 UPA1917TE-T1 |
Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD) P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1731G-E1 UPA1731G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
UPA1819GR-9JG-E1 UPA1819GR-9JG-E2 |
Pch enhancement MOS FET
|
NEC
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp. NEC, Corp. Lattice Semiconductor, Corp.
|
SP8J5 |
4V Drive Pch Pch MOS FET
|
Rohm
|
2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1726G-E2 UPA1726G-E1 |
N-channel enhancement type power MOS FET
|
NEC
|
UPA1723G-E1 UPA1723G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|